2SC2655 |
Part Number | 2SC2655 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm • Low saturation voltage: VCE... |
Features |
ficantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21
2SC2655
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturat... |
Document |
2SC2655 Data Sheet
PDF 148.31KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC2650 |
Toshiba |
Silicon NPN Transistor | |
2 | 2SC2650 |
INCHANGE |
Silicon NPN Power Transistor | |
3 | 2SC2652 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC2653 |
Panasonic |
NPN Transistor | |
5 | 2SC2653H |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 2SC2653H |
Panasonic |
NPN Transistor |