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2SC2462 |
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| Part Number | 2SC2462 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC2462 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2462 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Co... |
| Features |
oltage Note: Grade Mark hFE B LB 100 to 200 C LC 160 to 320 V(BR)EBO I CBO I EBO hFE*
100 — — D LD
VCE(sat) VBE
V V
I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA
1. The 2SC2462 is grouped by h FE as follows.
250 to 500
See characteristic curves of 2SC458 (LG).
2
2SC2462
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150
100
50
0
50 100 Ambient Temperature Ta (°C)
150
3
Unit: mm
0.65
0.10 3 – 0.4 + – 0.05 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weig... |
| Document |
 2SC2462 Data Sheet
PDF 24.17KB |
Desde 2024. D4U Semiconductor.
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