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BUX31B |
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| Part Number | BUX31B |
| Manufacturer | Inchange Semiconductor |
| Description | High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 500V (Min)-BUX31B ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust devi... |
| Features |
j-c Thermal Resistance, Junction to Case
MAX UNIT 1.0 ℃/W
BUX31/A/B
· isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUX31 BUX31A IC= 50mA ; IB= 0 BUX31B VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage Collector Cutoff Current BUX31 BUX31A BUX31B Emitter Cuto... |
| Document |
 BUX31B Data Sheet
PDF 205.65KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUX31 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BUX31A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | BUX30 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | BUX30 |
INCHANGE |
NPN Transistor |
|
| 5 | BUX32 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | BUX32 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
Desde 2024. D4U Semiconductor.
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