2SC1212 |
Part Number | 2SC1212 |
Manufacturer | Hitachi Semiconductor |
Description | 2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Coll... |
Features |
IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA
Min 50 50 4 — 60 20 — — —
Typ — — — — — — 0.65 0.75 160
DC current tarnsfer ratio hFE* hFE Base to emitter voltage VBE Collector to emitter saturation voltage
VCE(sat)
Gain bandwidth product f T Note: B 60 to 120
1. The 2SC1212 and 2SC1212A are grouped by h FE as follows. C 100 to 200
Maximum Collector Dissipation Curve 1.0 Collector power dissipation PC (W) Collector power dissipation PC (W) 12
Maximum Collector Dissipation Cu... |
Document |
2SC1212 Data Sheet
PDF 29.83KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC1212 |
INCHANGE |
NPN Transistor | |
2 | 2SC1212 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC1212A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
4 | 2SC1212A |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC1212A |
INCHANGE |
NPN Transistor | |
6 | 2SC1213 |
Hitachi Semiconductor |
Silicon NPN Transistor |