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P12NB30 |
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| Part Number | P12NB30 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Co... |
| Features |
T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T emperature Max. O perating Junction Temperature
o o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value ST P12NB30 ST P12NB30FP 300 300 ± 30 12 7.5 48 125 1 5.5 -65 to 150 150 6.5 4 48 35 0.28 5.5 2000
Uni t V V V A A A W W/ o C V/ ns V
o o
C C 1/6
Januar... |
| Document |
 P12NB30 Data Sheet
PDF 108.30KB |
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