2SD380 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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2SD380

Inchange Semiconductor
2SD380
2SD380 2SD380
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Part Number 2SD380
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizont...
Features VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 750V ; IE= 0 VCB= 1500V ; IE= 0 hFE DC Current Gain IC= 5A ; VCE= 10V tf Fall Time tstg Storage Time IC= 5A, IBend= 1.5A, LB= 5μH 2SD380 MIN TYP. MAX UNIT 5 V 10 V 1.6 V 100 μA 1 mA 5 15 0.9 μs 11 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products...

Document Datasheet 2SD380 Data Sheet
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