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2SB1155 |
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| Part Number | 2SB1155 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Paramet... |
| Features |
q q q q
16.2±0.5 12.5 3.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
21.0±0.5 15.0±0.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –130 –80 –7 –25 –15 80 3 150... |
| Document |
 2SB1155 Data Sheet
PDF 61.09KB |
Desde 2024. D4U Semiconductor.
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