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2SB1103 |
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| Part Number | 2SB1103 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 1 2 3 2SB1103 Absolute ... |
| Features |
IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I D = 8 A*1 I C = –4 A, I B1 = –IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current tarnsfer ratio Collector to emitter saturation voltage hFE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 C to E diode forward voltage Turn on time Storage time Fall time Note: 1. Pulse Test. VD t on t stg tf 2 2SB1103 Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) iC(peak) –10 IC(max) Collector current IC (A) –3 –1.0 ... |
| Document |
 2SB1103 Data Sheet
PDF 36.84KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1100 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 2 | 2SB1101 |
Hitachi Semiconductor |
PNP Transistor |
|
| 3 | 2SB1101 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1101 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1102 |
Hitachi Semiconductor |
PNP Transistor |
|
| 6 | 2SB1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
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