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KDV216E |
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| Part Number | KDV216E |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio Low Series Resistance KDV216E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C 1 E CATHODE MARK B A GG MAXIMUM R... |
| Features |
High Capacitance Ratio Low Series Resistance
KDV216E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
C 1
E
CATHODE MARK B A
GG
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 32 125
-55 125
UNIT V
2 D
1. ANODE 2. CATHODE
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10
ESC
Marking
Type Name
V3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
IR VR=32V
C1V VR=1V, f=1MHz
Cap... |
| Document |
 KDV216E Data Sheet
PDF 353.51KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KDV214 |
KEC |
VARIABLE CAPACITANCE DIODE |
|
| 2 | KDV214A |
KEC |
VARIABLE CAPACITANCE DIODE |
|
| 3 | KDV214E |
KEC |
VARIABLE CAPACITANCE DIODE |
|
| 4 | KDV214EA |
KEC |
SILICON EPITAXIAL PLANAR DIODE |
|
| 5 | KDV214V |
KEC |
SILICON EPITAXIAL PLANAR DIODE |
|
| 6 | KDV214VA |
KEC |
SILICON EPITAXIAL PLANAR DIODE |
|
Desde 2024. D4U Semiconductor.
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