KDV214V |
Part Number | KDV214V |
Manufacturer | KEC |
Description | SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for ... |
Features |
High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 32 125
-55 125
UNIT V
CE DF
KDV214V
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
21
B DIM MILLIMETERS
A A 1.4Ź0.05 B 1.0Ź0.05 C 0.6Ź0.05 D 0.28Ź0.03 E 0.5Ź0.05 F 0.12Ź0.03
VSC
Marking
Type Name
V1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reve... |
Document |
KDV214V Data Sheet
PDF 31.16KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | KDV214 |
KEC |
VARIABLE CAPACITANCE DIODE | |
2 | KDV214A |
KEC |
VARIABLE CAPACITANCE DIODE | |
3 | KDV214E |
KEC |
VARIABLE CAPACITANCE DIODE | |
4 | KDV214EA |
KEC |
SILICON EPITAXIAL PLANAR DIODE | |
5 | KDV214VA |
KEC |
SILICON EPITAXIAL PLANAR DIODE | |
6 | KDV215 |
KEC |
SILICON EPITAXIAL PLANAR DIODE |