PTFA192401F |
Part Number | PTFA192401F |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermall... |
Features |
include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2
PTFA192401F Package H-37260-2
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 34 36 38 40 42 44 46 48 50 35 30 25
Features
• • • Drain Efficiency (%) Pb-free, RoHS-compliant and thermally-enhanced p... |
Document |
PTFA192401F Data Sheet
PDF 441.79KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PTFA192401E |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PTFA192001E |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTFA192001F |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTFA190451E |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTFA190451F |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTFA191001E |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET |