PTFA182001E Infineon Technologies Thermally-Enhanced High Power RF LDMOS FET Datasheet. existencias, precio

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PTFA182001E

Infineon Technologies
PTFA182001E
PTFA182001E PTFA182001E
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Part Number PTFA182001E
Manufacturer Infineon (https://www.infineon.com/) Technologies
Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output matching, and thermally-enhanced single-ended package with a slotted fla...
Features include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA182001E Package H-30260-2 2-Tone Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz -25 45 Features


• Drain Efficiency (%) Pb-free, RoHS-compliant and thermally-enhanced package Broadband internal matching Typical EDGE performance at 1836.6 MHz, 30 V - Average output power = 50 dBm - Linear gain = 16.3 dB - Efficiency = 37% - EVM = 3.1...

Document Datasheet PTFA182001E Data Sheet
PDF 271.73KB

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