PTFA181001HL Infineon Technologies Thermally-Enhanced High Power RF LDMOS FET Datasheet. existencias, precio

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PTFA181001HL

Infineon Technologies
PTFA181001HL
PTFA181001HL PTFA181001HL
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Part Number PTFA181001HL
Manufacturer Infineon (https://www.infineon.com/) Technologies
Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermal...
Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL* Package PG-63248-2 PTFA181001HL* Package PG-64248-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -30 35 Features
• Thermally-enhanced, plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant Broadband internal matching Typical EDGE performance at 1...

Document Datasheet PTFA181001HL Data Sheet
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