Busque con el número de pieza junto con el fabricante o la descripción
PTFA181001F |
Click to view a larger image
| Part Number | PTFA181001F |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced pac... |
| Features |
include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2
PTFA181001F Package H-37248-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-23 35
Features
• • • Thermally-enhanced packages Broadband internal matching Typical EDGE performance at 1879.8 MHz, 28 V - Average output power = 45 W - Linear Gain = 16.5 dB - Effici... |
| Document |
 PTFA181001F Data Sheet
PDF 418.90KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PTFA181001E |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 2 | PTFA181001GL |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 3 | PTFA181001HL |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 4 | PTFA180701E |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 5 | PTFA180701F |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 6 | PTFA182001E |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FET |
|
Desde 2024. D4U Semiconductor.
|