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IPB100N04S3-03 |
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| Part Number | IPB100N04S3-03 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | www.DataSheet4U.net IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on) (SMD Version) ID 40 2.5 100 V mΩ A Features • N-channel - Enhancement mo... |
| Features |
• N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN0403 3PN0403 3PN0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse Gate source volt... |
| Document |
 IPB100N04S3-03 Data Sheet
PDF 215.92KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB100N04S2-04 |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPB100N04S2L-03 |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB100N04S4-H2 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 4 | IPB100N06S2-05 |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPB100N06S2L-05 |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPB100N06S3-03 |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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