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SEMIX453GAL12E4S |
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| Part Number | SEMIX453GAL12E4S |
| Manufacturer | Semikron International |
| Description | SEMiX453GAL12E4s SEMiX® 3s Trench IGBT Modules SEMiX453GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capabi... |
| Features |
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 RGoff,main = 1,0 RG,X = 2,2 RE,X = 0,5 Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xIC... |
| Document |
 SEMIX453GAL12E4S Data Sheet
PDF 502.90KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SEMIX453GAL12T4S |
Semikron International |
Trench IGBT |
|
| 2 | SEMiX453GAL17E4s |
Semikron |
IGBT |
|
| 3 | SEMIX453GAR12E4S |
Semikron International |
Trench IGBT |
|
| 4 | SEMiX453GB07E3p |
Semikron |
IGBT |
|
| 5 | SEMiX453GB12E4I33p |
Semikron |
IGBT |
|
| 6 | SEMiX453GB12E4Ip |
Semikron |
IGBT |
|
Desde 2024. D4U Semiconductor.
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