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2SA757 |
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| Part Number | 2SA757 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Power Dissipation- : PC= 60W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC... |
| Features |
(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
hFE-1 Classifications A B C 25-60 50-120 100-200 MIN TYP. MAX UNIT -90 V -120 V -5 V -1.8 V -1.5 V -1.0 mA 25 200 20 24 MHz Notice： ISC reserves the righ... |
| Document |
 2SA757 Data Sheet
PDF 198.35KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA751 |
ETC |
SI PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | 2SA752 |
ETC |
SI PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | 2SA753 |
SavantIC |
Silicon POwer Transistors |
|
| 4 | 2SA753 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 5 | 2SA754 |
SavantIC |
Silicon POwer Transistors |
|
| 6 | 2SA754 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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