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2SA1060 |
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| Part Number | 2SA1060 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power Dissipation ·Complement to Type 2SC2484 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
| Features |
or-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -0.02A ; VCE= -5V
hFE-2
DC Current Gain
IC= -1A ; VCE= -5V
hFE-3
DC Current Gain
IC= -3A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
MIN TYP. MAX UNIT
-80
V
-2.0 V
-1.8 V
-50 μA
-50 μA
20
40
200
20
20
MHz
hFE-2 Classifications R Q P 40-80 60-120 100-200 Notice： ISC reserves the rights to make changes of the content here... |
| Document |
 2SA1060 Data Sheet
PDF 208.70KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1060 |
Panasonic Semiconductor |
Transistor |
|
| 2 | 2SA1060 |
SavantIC |
Silicon POwer Transistors |
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| 3 | 2SA1061 |
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TRANSISTOR |
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| 4 | 2SA1061 |
SavantIC |
Silicon POwer Transistors |
|
| 5 | 2SA1061 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SA1062 |
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TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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