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LS3N191 |
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| Part Number | LS3N191 |
| Manufacturer | Micross |
| Description | LS3N191 P-CHANNEL MOSFET The LS3N191 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL LS3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CA... |
| Features |
DIRECT REPLACEMENT FOR INTERSIL LS3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF The hermetically sealed TO-78 package is well suited ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) for high reliability and harsh environment applications. Maximum Temperatures Storage Temperature ‐65°C to +150°C (See Packaging Information). Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW LS3N191 Features: Continuous Power Dissipation (one side) 525mW MAXIMUM CURRENT Very high Inp... |
| Document |
 LS3N191 Data Sheet
PDF 307.47KB |
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