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LS3N166 |
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| Part Number | LS3N166 |
| Manufacturer | Micross |
| Description | LS3N166 P-CHANNEL MOSFET The LS3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL LS3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)... |
| Features |
DIRECT REPLACEMENT FOR INTERSIL LS3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature ‐65°C to +200°C for high reliability and harsh environment applications. Operating Junction Temperature ‐55°C to +150°C Lead Temperature (Soldering, 10 sec.) +300°C (See Packaging Information). Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW LS3N166 Features: Total Derating above 25°C 4.2 mW/°C MAXIMUM CURRENT Very high Input Impedance Drain Current 50mA Low Capa... |
| Document |
 LS3N166 Data Sheet
PDF 377.31KB |
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