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LS3N163 |
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| Part Number | LS3N163 |
| Manufacturer | Micross |
| Description | LS3N163 P-CHANNEL MOSFET The LS3N163 is an enhancement mode P-Channel Mosfet The LS3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetic... |
| Features |
DIRECT REPLACEMENT FOR INTERSIL LS3N163 ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) ‐65°C to +200°C ‐55°C to +150°C 375mW 50mA
Maximum Temperatures Storage Temperature (See Packaging Information). Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation LS3N163 Features: MAXIMUM CURRENT Very high Input Impedance Drain Current Low Capacitance MAXIMUM VOLTAGES High Gain Drain to Gate High Gate Breakdown Voltage Drain to Source Low Threshold Voltage Peak Gate to Source2 LS3N163 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherw... |
| Document |
 LS3N163 Data Sheet
PDF 378.27KB |
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