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3N191 |
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| Part Number | 3N191 |
| Manufacturer | Micross |
| Description | 3N191 P-CHANNEL MOSFET The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITA... |
| Features |
DIRECT REPLACEMENT FOR INTERSIL 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF The hermetically sealed TO-78 package is well suited ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) for high reliability and harsh environment applications. Maximum Temperatures Storage Temperature ‐65°C to +150°C (See Packaging Information). Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW 3N191 Features: Continuous Power Dissipation (one side) 525mW MAXIMUM CURRENT Very high Input I... |
| Document |
 3N191 Data Sheet
PDF 306.90KB |
Similar Datasheet
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| 1 | 3N190 |
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Desde 2024. D4U Semiconductor.
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