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IXFH20N80P |
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| Part Number | IXFH20N80P |
| Manufacturer | IXYS Corporation |
| Description | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 RDS(on) trr = 800 V = 20 A ≤ 520 m Ω ≤ 2... |
| Features |
D = Drain Tab = Drain
Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µA mΩ
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International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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VGS = 10 V, ID = 10 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
Easy to mount Space savings High power density
DS995... |
| Document |
 IXFH20N80P Data Sheet
PDF 342.02KB |
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