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IXFH20N100P |
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| Part Number | IXFH20N100P |
| Manufacturer | IXYS Corporation |
| Description | PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ =... |
| Features |
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International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 200 V V nA
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Easy to mount Space savings High power density
Applications:
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25 μA 1.5 mA 470 570 mΩ
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VGS = 10V, ID = 0.5 • ID25, Note 1 Switched-mode and resonant-mode po... |
| Document |
 IXFH20N100P Data Sheet
PDF 134.72KB |
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Desde 2024. D4U Semiconductor.
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