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IXFH16N120P |
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| Part Number | IXFH16N120P |
| Manufacturer | IXYS Corporation |
| Description | PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = ... |
| Features |
z z z
TAB
TO-268 (IXFT)
G
S
TAB
G = Gate S = Source
D = Drain TAB = Drain
z
International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ± 200 V V nA
Applications:
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25 μA 2.5 mA 950 mΩ
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... |
| Document |
 IXFH16N120P Data Sheet
PDF 134.65KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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