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IXFH160N15T |
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| Part Number | IXFH160N15T |
| Manufacturer | IXYS Corporation |
| Description | Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150V = 160A ≤ 9.6mΩ Symbol VDSS VDGR VGSM ID25 ILRMS... |
| Features |
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Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages
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Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C
Characteristic Values Min. Typ. Max. 150 2.5 5.0 V V
Applications
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± 200 nA 5 μA 250 μA 8.0 9.6 mΩ
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VGS = 10V, ID = 0.5 • ID25, Note 1 DC-DC converters Battery chargers Switched-mode and resona... |
| Document |
 IXFH160N15T Data Sheet
PDF 149.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFH160N15T |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXFH160N15T2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXFH160N15T2 |
IXYS |
Power MOSFET |
|
| 4 | IXFH16N120P |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXFH16N50P |
IXYS Corporation |
Polar MOSFETs |
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| 6 | IXFH16N80P |
IXYS Corporation |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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