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IXFH15N100P |
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| Part Number | IXFH15N100P |
| Manufacturer | IXYS Corporation |
| Description | PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 15A 760mΩ 300ns PLUS220 (... |
| Features |
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D = Drain TAB = Drain
Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) Mounting force (PLUS 220) TO-247 PLUS 220 types
300 260 1.13/10 11..65/2.5..14.6 6 4
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International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C 670 Characteristic Values Min. Typ. Max. 1000 3... |
| Document |
 IXFH15N100P Data Sheet
PDF 192.61KB |
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Desde 2024. D4U Semiconductor.
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