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IXFC12N80P |
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| Part Number | IXFC12N80P |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 12N80P VDSS ID25 RDS(on) trr = 800 V = 7 A ≤ 0.93 mΩ ≤ 250 ns N-Channel Enhan... |
| Features |
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control Advantages z Easy assembly: no screws, or isolation foils required z Space savings z High power density z Low collector capacitance to ground (low EMI)
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IS... |
| Document |
 IXFC12N80P Data Sheet
PDF 218.04KB |
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Desde 2024. D4U Semiconductor.
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