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IXFB170N30P |
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| Part Number | IXFB170N30P |
| Manufacturer | IXYS Corporation |
| Description | Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB170N30P VDSS ID25 RDS(on) trr = = ≤ ≤ 300V 170A 18mΩ 200ns ... |
| Features |
• Fast intrinsic diode • Avalanche Rated • Unclamped Inductive Switching (UIS) rated • Very low Rth results high power dissipation • Low RDS(ON) and QG • Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V Characteristic Values Min. Typ. Max. 300 2.5 VGS = 10V, ID = 0.5 • ID25, Note 1 www.DataSheet4U.net © 2008 IXYS CORPORATION, All rights reserved DS100000(06/08) IXFB170N30P Symbol Test... |
| Document |
 IXFB170N30P Data Sheet
PDF 145.46KB |
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