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IXFB120N50P2 |
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| Part Number | IXFB120N50P2 |
| Manufacturer | IXYS Corporation |
| Description | Preliminary Technical Information PolarP2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB120N50P2 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 120A 43mΩ 300n... |
| Features |
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High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(ON) Low Package Inductance
Advantages
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Plus 264TM Package for Clip or Spring Mounting High Power Density Easy to Mount Space Savings
Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 200 V V nA
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Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives ... |
| Document |
 IXFB120N50P2 Data Sheet
PDF 158.43KB |
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Desde 2024. D4U Semiconductor.
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