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IXFB100N50P |
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| Part Number | IXFB100N50P |
| Manufacturer | IXYS Corporation |
| Description | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 100N50P VDSS ID25 RDS(on) trr = 500 V = 100 A ≤ 49 mΩ ≤ 200 ns Symbol VDSS VDGR VGSS VGSM ID25... |
| Features |
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International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force
300 260 30..120/7.5...2.7 10
Advantages
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Plus 264TM package for clip or spring Space savings High power density
Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 ±... |
| Document |
 IXFB100N50P Data Sheet
PDF 152.76KB |
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Desde 2024. D4U Semiconductor.
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