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IXFH10N80P |
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| Part Number | IXFH10N80P |
| Manufacturer | IXYS Corporation |
| Description | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-220AB (IXFP) VDSS ID25 trr RDS(on) =... |
| Features |
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1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 TO-3P TO-247 (TO-220,TO-247)
300 260 1.13 / 10 2.5 3.0 5.5 6.0 Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 25
International Standard Packages Avalanche Rated Low Package Inductance Easy to Drive and to Protect
Advantages
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Easy to Mount Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 2.5mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 0.5 • ID25, N... |
| Document |
 IXFH10N80P Data Sheet
PDF 168.74KB |
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Desde 2024. D4U Semiconductor.
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