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IXFH102N15T |
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| Part Number | IXFH102N15T |
| Manufacturer | IXYS Corporation |
| Description | Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V = 102A ≤ 18mΩ ≤ 120ns TO-263 (IXFA) G S (TAB) Sy... |
| Features |
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(TO-220 & TO-247) 1.13 / 10 (TO-263) 10..65 / 2.2..14.6 2.5 3.0 6.0
International Standard Packages Avalanche Rated
Weight
Advantages
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Easy to Mount Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C
Characteristic Values Min. Typ. Max. 150 2.5 5.0 V V
Applications
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± 200 nA 5 μA 750 μ A 18 mΩ
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VGS = 10V, ID = 0.5 • ID25, Note 1 DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode ... |
| Document |
 IXFH102N15T Data Sheet
PDF 226.94KB |
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Desde 2024. D4U Semiconductor.
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