IXFN36N110P IXYS Corporation Polar Power MOSFET HiPerFET Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

IXFN36N110P

IXYS Corporation
IXFN36N110P
IXFN36N110P IXFN36N110P
zoom Click to view a larger image
Part Number IXFN36N110P
Manufacturer IXYS Corporation
Description PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight www.DataSheet4U.net ...
Features
• International standard package
• Encapsulating epoxy meets 1.6mm (0.062 in.) from case for 10s 50/60Hz, RMS IISOL ≤ 1mA t = 1min t = 1s 300 2500 3000 1.5/13 1.3/ 11.5 30 UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• Fast recovery diode
• Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque rated
• Low package inductance - easy to drive and to protect Advantages
• Easy to mount
• Space savings
• High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID ...

Document Datasheet IXFN36N110P Data Sheet
PDF 129.67KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IXFN36N100
ETC
HiPerFET Power MOSFETs Single Die MOSFET Datasheet
2 IXFN36N60
IXYS
HiPerFET Power MOSFET Datasheet
3 IXFN360N10T
IXYS Corporation
GigaMOS Trench HiperFET Power MOSFET Datasheet
4 IXFN360N15T2
IXYS Corporation
GigaMOS TrenchT2 HiperFET Power MOSFET Datasheet
5 IXFN300N10P
IXYS Corporation
Polar Power MOSFET HiPerFET Datasheet
6 IXFN30N110P
IXYS Corporation
Polar Power MOSFET HiPerFET Datasheet
More datasheet from IXYS Corporation
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad