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IXFN360N10T |
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| Part Number | IXFN360N10T |
| Manufacturer | IXYS Corporation |
| Description | GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN360N10T VDSS ID25 RDS(on) trr = = ≤ ≤ 100V 360A 2.6mΩ 130ns miniBLOC, SOT-227 E15... |
| Features |
z z z z z z
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 Minute t = 1 Second
300 260 2500 3000 1.5/13 1.3/11.5 30
Mounting Torque Terminal Connection Torque
International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on)
Advantages
z z z
Weight
Easy to Mount Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V... |
| Document |
 IXFN360N10T Data Sheet
PDF 195.37KB |
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Desde 2024. D4U Semiconductor.
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