IXFN32N80P |
Part Number | IXFN32N80P |
Manufacturer | IXYS Corporation |
Description | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N80P VDSS ID25 RDS(on) trr = 800 V = 25 A ≤ 270 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 ID... |
Features |
• International standard package • Encapsulating epoxy meets 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque 300 2500 3000 UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride l l Md Weight 1.5 / 13 Nm/lb.in. 1.5 / 13 Nm/lb.in. 30 g l isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA... |
Document |
IXFN32N80P Data Sheet
PDF 111.87KB |
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