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IXFN32N100P |
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| Part Number | IXFN32N100P |
| Manufacturer | IXYS Corporation |
| Description | PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case... |
| Features |
z z
z
t = 1min t = 1s
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Mounting torque Terminal connection torque
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International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Weight
Advantages
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 16A, Note 1 TJ = 125°C
Characteristic Values Min. Typ... |
| Document |
 IXFN32N100P Data Sheet
PDF 128.09KB |
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Desde 2024. D4U Semiconductor.
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