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IXFN30N110P |
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| Part Number | IXFN30N110P |
| Manufacturer | IXYS Corporation |
| Description | PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case... |
| Features |
• International standard package • Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inductive Switching (UIS) t = 1min t = 1s rated • Low package inductance - ... |
| Document |
 IXFN30N110P Data Sheet
PDF 126.61KB |
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Desde 2024. D4U Semiconductor.
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