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IXFN300N10P |
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| Part Number | IXFN300N10P |
| Manufacturer | IXYS Corporation |
| Description | Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg... |
| Features |
• • • • z z z miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source t = 1min t = 1s Mounting torque Terminal connection torque Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance High current capability Isolation voltage 3000 V~ International standard package Advantages z z Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 50A, ... |
| Document |
 IXFN300N10P Data Sheet
PDF 138.87KB |
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Desde 2024. D4U Semiconductor.
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