IXFN160N30T |
Part Number | IXFN160N30T |
Manufacturer | IXYS Corporation |
Description | Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN160N30T RDS(on) ≤ ≤ trr VDSS ID25 = = 300V 130A 19mΩ 200ns miniBLOC, SOT... |
Features |
z z
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA
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300 260 2500 3000 1.5/13 1.3/11.5 30
t = 1 minute t = 1 second
Mounting Torque Terminal Connection Torque
International Standard Package miniBLOC, with Aluminium Nitride Isolation z Isolation voltage 2500 V~ z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages
z z
Weight
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VDS = 0V VDS = VDSS,... |
Document |
IXFN160N30T Data Sheet
PDF 162.52KB |
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