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IXFN100N50P |
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| Part Number | IXFN100N50P |
| Manufacturer | IXYS Corporation |
| Description | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 100N50P VDSS ID25 RDS(on) trr = = ≤ ≤ 500 V 90 A 49 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25... |
| Features |
• International standard package • Encapsulating epoxy meets www.DataSheet4U.net 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤1 mA t=1s Mounting torque Terminal connection torque SOT-227B 300 2500 3000 UL 94 V-0, flammability classification isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect • miniBLOC with Aluminium nitride l l 1.5 / 13 Nm/lb.in. 1.5 / 13 Nm/lb.in. 30 g l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA V... |
| Document |
 IXFN100N50P Data Sheet
PDF 134.49KB |
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Desde 2024. D4U Semiconductor.
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