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IXFL44N80 |
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| Part Number | IXFL44N80 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGS... |
| Features |
z
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF)
z z z
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure
TL
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s
300 2500 3000 5
VISOL Weight
Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications
z z
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 ... |
| Document |
 IXFL44N80 Data Sheet
PDF 533.92KB |
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Desde 2024. D4U Semiconductor.
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