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IXFL39N90 |
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| Part Number | IXFL39N90 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Sym... |
| Features |
z
RDS(on) t
= 900 V = 34 A = 220 mΩ < ns
ISOPLUS-264TM
G
D
S
(Backside)
G = Gate S = Source
D = Drain
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF)
z z z
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications
z z
z
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Symbol
Test Conditions
C... |
| Document |
 IXFL39N90 Data Sheet
PDF 548.06KB |
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Desde 2024. D4U Semiconductor.
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