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IXFL32N120P |
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| Part Number | IXFL32N120P |
| Manufacturer | IXYS Corporation |
| Description | Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA E... |
| Features |
z
D
= Drain
Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode
Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force
300 260 2500 3000 40..120/4.5..27 8
FC Weight
Easy Assembly Space Savings High Power Density
Applications
z
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS , VGS = 0V Note 2, TJ ... |
| Document |
 IXFL32N120P Data Sheet
PDF 148.95KB |
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Desde 2024. D4U Semiconductor.
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