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IXFL34N100 |
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| Part Number | IXFL34N100 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFET ISOPLUS264TM (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv... |
| Features |
z
G D S ISOLATED TAB
G = Gate S = Source
D = Drain
1.6 mm (0.063 in.) from Case for 10s Plastic body for 10s Mounting Force 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s
300 260 40..120 / 9..27 2500 3000 8
Silicon Chip on Direct-Copper Bond (DCB) Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z Low Drain to Tab Capacitance(<30pF) z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Fast intrinsic Rectifier Advantages
z z z
High Power Density Easy to Mount Space Savings
Symbol Test Conditions (TJ = 25°C, Unl... |
| Document |
 IXFL34N100 Data Sheet
PDF 127.92KB |
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Desde 2024. D4U Semiconductor.
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