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IXFL36N110P |
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| Part Number | IXFL36N110P |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD... |
| Features |
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UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode
Advantages
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 18A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 1100 3.5 6.5 ± 300 50 V
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Easy to mount Space savings... |
| Document |
 IXFL36N110P Data Sheet
PDF 104.53KB |
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Desde 2024. D4U Semiconductor.
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