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IXFL38N100P |
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| Part Number | IXFL38N100P |
| Manufacturer | IXYS Corporation |
| Description | Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA E... |
| Features |
z
Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force
300 260 2500 3000 40..120/4.5..27 8
Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z International Standard Packages z miniBLOC, with Aluminium Nitride Isolation z Low Drain to Tab Capacitance(<30pF) z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Fast Intrinsic Diode
FC Weight
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V... |
| Document |
 IXFL38N100P Data Sheet
PDF 147.19KB |
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Desde 2024. D4U Semiconductor.
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