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DE275-501N16A |
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| Part Number | DE275-501N16A |
| Manufacturer | IXYS Corporation |
| Description | Directed Energy, Inc. An DE275-501N16A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR ... |
| Features |
SG1 SG2 GATE
= = = =
500 V 16 A .5 Ω 375 W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 3.0W/°C above 25°C Tc = 25°C
DRAIN
SD1
SD2
• Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No b... |
| Document |
 DE275-501N16A Data Sheet
PDF 102.01KB |
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