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AUIRG7CH80K6B-M |
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| Part Number | AUIRG7CH80K6B-M |
| Manufacturer | International Rectifier |
| Description | AUTOMOTIVE GRADE PD - 96279 • • • • • • • • • • 100% Tested at Probe * Designed for Automotive Application** Solderable Front Metal Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum ... |
| Features |
G E
n-channel
Applications • • Medium/High Power Inverters HEV/EV Inverter Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (on) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Enables Double side cooling and higher current density • Eliminates wire bonds and Improves Reliability Chip Type AUIRG7CH80K6B VCE 1200V ICn 200A Die Size 12 X 12 mm2 Package Wafer Mechanical Parameter Die Size Emiter Pad Size (Included Gate Pad) Gat... |
| Document |
 AUIRG7CH80K6B-M Data Sheet
PDF 114.39KB |
Similar Datasheet
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INSULATED GATE BIPOLAR TRANSISTOR |
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| 2 | AUIRG4BC30S-SL |
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| 3 | AUIRG4BC30U-S |
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| 4 | AUIRG4BC30U-SL |
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| 5 | AUIRG4PC40S-E |
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| 6 | AUIRG4PC40S-E |
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Desde 2024. D4U Semiconductor.
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