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K7B323635C |
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| Part Number | K7B323635C |
| Manufacturer | Samsung semiconductor |
| Description | The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M... |
| Features |
• Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 2.5 or 3.3V +/- 5% Power Supply. • 5V Tolerant Inputs Except I/O Pins. • Byte Writable Function. • Global Write Enable Controls a full bus-width write. • Power Down State via ZZ Signal. • LBO Pin allows a choice of either a interleaved burst or a linear burst. • Three Chip Enables for simple depth expansion with No Data Contention only for LQFP. • Asynchronous Output Enable Control. • ADSP, ADSC, ADV Burst Control Pins. • TTL-Level Three-State Output. • 100-LQFP-1420A (... |
| Document |
 K7B323635C Data Sheet
PDF 477.15KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K7B323625M |
Samsung semiconductor |
1Mx36 & 2Mx18 Synchronous SRAM |
|
| 2 | K7B321825M |
Samsung semiconductor |
1Mx36 & 2Mx18 Synchronous SRAM |
|
| 3 | K7B321835C |
Samsung semiconductor |
1Mx36 & 2Mx18 Synchronous SRAM |
|
| 4 | K7B161825A |
Samsung semiconductor |
512Kx36 & 1Mx18 Synchronous SRAM |
|
| 5 | K7B161835B |
Samsung Electronics |
512Kx36 & 1Mx18 Synchronous SRAM |
|
| 6 | K7B163625A |
Samsung semiconductor |
512Kx36 & 1Mx18 Synchronous SRAM |
|
Desde 2024. D4U Semiconductor.
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